In today’s power electronic market place, as in other areas of electronics, reducing cost is
necessary to stay competitive. A new generation of high voltage Power MOSFETs offers
lower on-resistance (RDS(ON)) using the same chip area as a previous generation of devices.
Smaller die MOSFETs are also being produced with this technology that have the same RDS(ON)
as a previous generation but now at a lower price.
This paper covers the use of these devices in a phase shifted control mode full bridge DC/DC
converter featuring zero voltage switching. A comparison was made between the performance
of an older generation device to the new generation device. The comparison shows that the
new smaller die device, while providing reduced cost, produced equal performance to the
older generation