The FM1808 is a 256-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile but operates in other respects as a RAM.
It provides data retention for 45 years while
eliminating the reliability concerns, functional
disadvantages and system design complexities of
battery-backed SRAM (BBSRAM). Fast write timing
and high write endurance make FRAM superior to
other types of nonvolatile memory.
In-system operation of the FM1808 is very similar to
other RAM devices. Minimum read- and write-cycle
times are equal. The FRAM memory, however, is
nonvolatile due to its unique ferroelectric memory
process. Unlike BBSRAM, the FM1808 is a truly
monolithic nonvolatile memory. It provides the same
functional benefits of a fast write without the
disadvantages associated with modules and batteries
or hybrid memory solutions.
These capabilities make the FM1808 ideal for
nonvolatile memory applications requiring frequent
or rapid writes in a bytewide environment. The
availability of a true surface-mount package improves
the manufacturability of new designs, while the DIP
package facilitates simple design retrofits. Device
specifications are guaranteed over an industrial
temperature range of -40°C to +85°C.